Pressure‐Controlled Structural Symmetry Transition in Layered InSe
نویسندگان
چکیده
منابع مشابه
Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composit...
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ژورنال
عنوان ژورنال: Laser & Photonics Reviews
سال: 2019
ISSN: 1863-8880,1863-8899
DOI: 10.1002/lpor.201900012